1/6 preliminary data february 2002 this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change wit hout notice. STP80NF55L-08 n-channel 55v - 0.0065 w - 80a to-220 stripfet? ii power mosfet n typical r ds (on) = 0.0065 w n low threshold drive n logic level device description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications n solenoid and relay drivers n motor control, audio amplifiers n dc-dc converters n automotive environment type v dss r ds(on) i d STP80NF55L-08 55 v <0.008 w 80 a 1 2 3 to-220 absolute maximum ratings ( )current limited by package ( ) pulse width limited by safe operating area (1) i sd 80a, di/dt 500a/s, v dd v (br)dss , t j t jmax . (2) starting t j = 25 o c i d = 40a v dd = 40v symbol parameter value unit v ds drain-source voltage (v gs = 0) 55 v v dgr drain-gate voltage (r gs = 20 k w ) 55 v v gs gate- source voltage 16 v i d ( ) drain current (continuos) at t c = 25c 80 a i d drain current (continuos) at t c = 100c 80 a i dm ( ) drain current (pulsed) 320 a p tot total dissipation at t c = 25c 300 w derating factor 2.0 w/c dv/dt (1) peak diode recovery voltage slope 15 v/ns e as (2) single pulse avalanche energy 870 mj t stg storage temperature -55 to 175 c t j max. operating junction temperature 175 c internal schematic diagram
STP80NF55L-08 2/6 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max 0.5 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 55 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 16 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 1 1.6 2.5 v r ds(on) static drain-source on resistance v gs = 10 v i d = 40 a v gs = 5 v i d = 40 a 0.0065 0.008 0.008 0.01 w w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds = 15v i d = 40 a 150 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v f = 1 mhz v gs = 0 4350 800 260 pf pf pf
3/6 STP80NF55L-08 switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 27 v i d = 40 a r g = 4.7 w v gs = 4.5 v (resistive load, figure 3) 35 145 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =27.5v i d =80a v gs =4.5v (see test circuit, figure 4) 75 20 30 100 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 27 v i d = 40 a r g = 4.7 w, v gs = 4.5 v (resistive load, figure 3) 85 65 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 80 320 a a v sd (*) forward on voltage i sd = 80 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a di/dt = 100a/s v dd = 20 v t j = 150c (see test circuit, figure 5) 85 280 6.5 ns nc a electrical characteristics (continued)
STP80NF55L-08 4/6 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
5/6 STP80NF55L-08 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
STP80NF55L-08 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com
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